PART |
Description |
Maker |
PV7F2Y0NSG-201 PV7F2T0NSG-201 PV7F2Y0NSG-203 PV7F2 |
Vandal and Water Resistant, TEMPERATURE: -20°C to 70°C, CONTACT RESISTANCE: 50mOHM Max. Vandal and Water Resistant, TEMPERATURE: -20掳C to 70掳C, CONTACT RESISTANCE: 50mOHM Max. Vandal and Water Resistant, TEMPERATURE: -20隆?C to 70隆?C, CONTACT RESISTANCE: 50mOHM Max.
|
http:// E-SWITCH
|
M41T80 |
Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push to Make; Switch Terminals:Screw; Contact Current Max:50mA
|
意法半导
|
1T412 |
Variable Capacitance Diode Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push
|
SONY[Sony Corporation]
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
S1P2655A03 S1P2655A05 S1P2655A01 S1P2655A02 S1P265 |
Linear integrated circuit. Input level TTL, CMOS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SOP-16 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR DIP-16 LT Series Water Resistant Linear Position Transducer, 76,2 mm [3.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000203 Level Meter Linear integrated circuit. Input level DTL, TTL, PMOS, CMOS
|
ITT, Corp. TE Connectivity, Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
FSL214R4 FSL214 FSL214D FSL214D1 FSL214D3 FSL214R |
PATCH PANEL HINGE KIT 4U SCA-H Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 1.5 A, 250 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
MN-TM93-03XA5 MN-TM93-04XA5 MN-TM94-02XC5 MN-TM96- |
PVC, UL 300 V, cold resistant (- 40掳C) PVC, UL 300 V, cold resistant (- 40°C)
|
SHIELD s.r.l. http://
|
FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system 8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条,100V的,0.230欧姆,拉德硬,SEGR耐,N沟道功率MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851 |
From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
FSGYE230R4 FSGYE230D1 FSGYE230R FSGYE230R3 FN4853 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
|